Method of manufacturing a diffraction grating for a semiconductor laser
US5238785A · kind A · utility
9Cited by
5References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 1990 |
| Grant date | Aug 24, 1993 |
| Priority date | — |
| Expiry date | Aug 17, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1215
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for manufacturing a diffraction grating includes applying a resist, the developing speed of which has an extreme at a certain exposure intensity, to a substrate on which the diffraction grating is to be formed, performing interference exposure of the resist with maximum and minimum values of exposure intensity respectively larger and smaller than the intensity which makes the developing speed an extreme, developing the resist, and etching the substrate using the remaining resist as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.