Method of fabricating a metal-oxide-semiconductor device having a semiconductor on insulator (SOI) structure

US5238857A · kind A · utility

Assignee

• FUJITSU LIMITED · JP

Inventors

• Noriaki Sato · Machida, JP
• Kazunori Imaoka · Komae, JP

Key dates

• Filing date: Jun 3, 1992
• Grant date: Aug 24, 1993
• Expiry date: Jun 3, 2012

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6744

Abstract

A metal-oxide-semiconductor device having a semiconductor-on-insulator structure comprises an insulator substrate; a single crystal semiconductor substrate provided on the insulator substrate, the single crystal semiconductor substrate and the insulator substrate forming a part of the semiconductor-on-insulator structure; source and drain regions doped to a first conduction type and defined in the single crystal semiconductor substrate; a channel region defined in the single crystal semiconductor substrate so as to be interposed between the source and drain regions, the channel region being doped to a second conduction type opposite to the first conduction type with a first impurity concentration level; a gate insulator film provided on the single crystal semiconductor substrate in correspondence to the channel region; and a gate electrode provided on the gate insulator film in correspondence to the channel region with a predetermined gate length; wherein the channel region is defined by a back channel elimination region having an increased impurity concentration level exceeding the first impurity concentration level such that the back channel elimination region is located adjacent…