Fabrication method for laminated films comprising Al-Si-Co alloy film and refractory metal silioide copper film
US5238874A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 9, 1990 |
| Grant date | Aug 24, 1993 |
| Priority date | — |
| Expiry date | Nov 9, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
As a wiring for semiconductor devices, the wiring consisting of an Al-Si-Cu alloy film is excellent in the electromigration resistance but is inferior in the stressmigration resistance. In order to compensate this aspect a laminated film consisting of an Al-Si-Cu alloy film and a refractory metal silicide film began to be used as the wiring, but a wiring thus obtained has a weakness in that its electromigration resistance deteriorates. However, it is possible to suppress the deterioration in the electromigration resistance while maintaining the stressmigration resistance by adding Cu to the refractory metal silicide film. In particular, when the refractory metal silicide film is a tungsten silicide film, the concentration of Cu is preferable that it is in the range of 0.1 to 1.0 wt. %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.