Josephson effect semiconductor device with channel layers of semiconductor and superconductor materials
US5239187A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1992 |
| Grant date | Aug 24, 1993 |
| Priority date | — |
| Expiry date | Mar 2, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/832
Abstract
Disclosed is a transistor or diode type Josephson effect device, at least two electrodes of which are made of superconductive material. If the Josephson effect is to be exerted in a semiconductor layer between the access electrodes, the distance between them should be smaller than the length of coherence, namely 10 to 1000 angstroms. According to the disclosure, the control channel between access electrodes is replaced by two channels perpendicular to the semiconductor layer, located between the two access electrodes and a layer of superconductive material placed between the substrate and the semiconductor layer. The disclosure can be applied to transistors, phototransistors and diodes with high switching speed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.