Integrated light emitting and light detecting device
US5239189A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1991 |
| Grant date | Aug 24, 1993 |
| Priority date | — |
| Expiry date | Jun 7, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F55/255
Abstract
An integrated semiconductor device includes a pair of spaced apart regions of semiconductor material on a surface of a substrate of semiconductor material. One of the regions is a light emitting device and the other region is a light detector device. Each of the regions is formed of a first layer on the substrate surface of a composition suitable for serving as a light detector active layer. Additional layers are on the first layer with at least one of the additional layers being of a composition to act as a light emitter active layer. A contact layer may be provided on the additional layers. The light detector region has a highly conductive region extending through the additional layers and slightly into the light detector active layer. The light emitter region may have a highly conductive region extending through some of the additional layers to the light emitting active layer. Thus, both the light emitting region and the light detecting region are formed from the same layers of semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.