MOS transistor with high threshold voltage
US5239195A · kind A · utility
8Cited by
7References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 15, 1991 |
| Grant date | Aug 24, 1993 |
| Priority date | — |
| Expiry date | May 15, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/601
Abstract
Disclosed is a MOS transistor with high threshold voltage comprising, in a semiconductor substrate with a first type of conductivity, surface drain and source regions with the second type of conductivity having a high doping concentration, separated by a thick oxide zone in which there is formed, in the substrate, an overdoped region with the first type of conductivity. Each of the drain and source regions is inserted in a well with the second type of conductivity, having a low doping concentration, formed in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.