Near-infrared radiation sensitive photoelectrographic master and imaging method
US5240800A · kind A · utility
3Cited by
20References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 29, 1991 |
| Grant date | Aug 31, 1993 |
| Priority date | — |
| Expiry date | Jul 29, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03G5/09
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoelectrographic element for electrostatic imaging, containing a conductive layer and a photosensitive layer, is produced using photosensitive layer materials which form a barrier to charge injection where exposed to near-infrared radiation. As a result, exposed areas can be charged, while unexposed portions cannot. The photosensitive layer contains an organic photoconductor, a near-infrared radiation sensitizer, and, optionally, an organic binder. A method of forming images with this phctoelectrographic element is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.