Method for forming patterned films on a substrate
US5240878A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1991 |
| Grant date | Aug 31, 1993 |
| Priority date | — |
| Expiry date | Apr 26, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/951
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming patterned films on a semiconductor substrate 10 includes the steps of depositing a hardened photo resist underlay 30 onto the substrate, then depositing a polyether sulfone release layer 32, then depositing a photo sensitive resist layer 34 and exposing an etching a metallization pattern 36, 38 to the substrate 10. The structure is then blanket deposited with a conductive layer 40 to thereby create a conductive contact stud 42. The film layer 40 and resist layer 34 are removed by dissolving the polyether sulfone layer 32 in an NMP solution and the photo resist underlayer 30 is then removed using a selective photo resist stripper composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.