Proximity correction method for E-beam lithography
US5241185A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 8, 1992 |
| Grant date | Aug 31, 1993 |
| Priority date | — |
| Expiry date | Jan 8, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31769
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of proximity correction in an E-beam lithography system wherein each design shape is contracted by a predetermined bias and the E-beam dose required at any given point of the design is determined such that each of the design shapes is enlarged, on development, by the value of the predetermined bias, the determination of the E-beam dose being made in accordance with a predetermined relationship between an indicator, such as the electron backscatter, and the required E-beam dose, the indicator being defined for a plurality of points arranged on a coarse grid on the design and being indicative of the degree of the proximity effect at the respective point, the determination of the required dose being made by solving, at each of the plurality of points on the design, an integral equation relating the indicator to the E-beam dose distribution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.