Semiconductor device comprising an analogue element and a digital element
US5241208A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 6, 1991 |
| Grant date | Aug 31, 1993 |
| Priority date | — |
| Expiry date | Sep 6, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/00
Abstract
A semiconductor device, comprises a semiconductor substrate, a digital element part as a pair of MOS transistors formed on the semiconductor substrate; and an analog element part as a pair of MOS transistors formed on the semiconductor substrate, wherein a gate insulator film of the analogue element part comprises at least a first silicon oxide film and a silicon nitride film, a gate insulator film of the digital element part comprises a second silicon oxide, and the gate insulation film of the analogue element part is thicker than the gate insulation film of the digital element part. A fabrication method of the semiconductor device also is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.