Method of die bonding semiconductor chip
US5242099A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 28, 1992 |
| Grant date | Sep 7, 1993 |
| Priority date | — |
| Expiry date | Feb 28, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a manufacturing method for a semiconductor device, first, a diffused layer of a soldering material is provided previously either on the reverse surface of a die or on the obverse surface of a die pad. Then, a diffusing layer is formed on either surface of the diffused layer. The diffusing layer between the die and the die pad is brought into contact with the die and die pad, and then these components are heated. The die is thereby and fully bonded to the die pad, even when the diffusing layer, which is an initial bonding layer, is made thinner. Because the time for the diffusing layer to diffuse can be shortened, the time for installing the die can also be shortened.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.