Method of manufacturing semiconductor structures
US5242857A · kind A · utility
9Cited by
16References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1992 |
| Grant date | Sep 7, 1993 |
| Priority date | — |
| Expiry date | Jan 22, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/978
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a semiconductor buried heterostructure laser having a mesa (2, 3, 4) and confinement layers (5, 6, 7) on a substrate (12), at least the lowermost of the confinement layers (5, 6, 7) is substantially planar up to the mesa. This is achieved by MOVPE growth of InP against lateral surfaces of the mesa (2, 3, 4) which are defined by distinct crystallographic planes of the material of the mesa. In particular (111) B InP planes are used. The laser is particularly for use in the field of optical communications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.