Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type
US5243202A · kind A · utility
507Cited by
6References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 1993 |
| Grant date | Sep 7, 1993 |
| Priority date | — |
| Expiry date | Jan 12, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin-film transistor comprises a gate electrode formed on a glass substrate, a gate insulating film formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film placed on the gate insulating film to cover the gate electrode; and a drain electrode and a source electrode spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate electrode is made of titanium-containing aluminum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.