MIS semiconductor device formed by utilizing SOI substrate having a semiconductor thin film formed on a substrate through an insulating layer
US5243213A · kind A · utility
61Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 8, 1991 |
| Grant date | Sep 7, 1993 |
| Priority date | — |
| Expiry date | Jul 8, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/928
Abstract
The present invention is directed to a MIS semiconductor device having a semiconductor layer formed on an insulating substrate and a gate electrode formed on this semiconductor layer through a gate insulating film, which is provided with a semiconductor region of a second conductivity type or a metal layer formed adjacent to a source region of a first conductivity type but separated from a channel region, thereby suppressing degradation of breakdown voltage caused by impact ionization, which is a defect of the MIS semiconductor device formed on an SOI substrate, to improve the reliability of this kind of MIS semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.