Method to produce a display screen with a matrix of transistors provided with an optical mask

US5243260A · kind A · utility

Assignee

• l'Etat Francais, represente par le Ministere des Postes, des Telecommunications et de l'Espace (Centre National d'Etudes des Telecommunications) CNT FRX COD 07 · FR

Inventors

• Bruno Vinouze · Port Blanc, FR
• Hugues Lebrun · Voiron, FR

Key dates

• Filing date: Sep 19, 1991
• Grant date: Sep 7, 1993
• Expiry date: Sep 19, 2011

Classification

• Technology area (CPC G): Physics
• CPC primary: G02F2202/103
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

Method for producing a display screen with a matrix of transistors provided with an optical mask. This method consists of depositing on a substrate (100) a layer of black polyimide (102) absorbing the visible light and followed by a layer of photosensitive resin, of insolating the resin through a mask masking the channels of the transistors to be embodied, of eliminating the zones insolated with the resin and the sub-adjacent zones of the polyimide, of depositing an ITO layer (106) on the unit, of eliminating the rest of the resin and the ITO surmounting said resin so as to form the drains/sources of the transistors, of successively depositing a layer of hydrogenated amorphous silicon (110), a layer of silicon nitride (112) and a layer of aluminium (114), then of photoengraving the stack of these layers so as to form the gate of the transistors, and finally to render passive the unit with a layer of silicon (116).