Sense amplifier for nonvolatile semiconductor storage devices
US5243573A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 1991 |
| Grant date | Sep 7, 1993 |
| Priority date | — |
| Expiry date | Aug 15, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier for nonvolatile semiconductor storage devices, wherein a first reference voltage is generated from a first reference voltage generating circuit and a second reference voltage is generated from a second reference voltage generating circuit. A latch type sense amplifier is provided, which is connected to a bit line via a selection transistor. The latch type sense amplifier includes input/output terminals in two directions and serves to latch information when the input voltage at one input/output terminal is higher than the voltage at the other input/output terminal. A first gate transistor, conductive in response to the second reference voltage, is connected between the output of the first reference voltage generating circuit and the one input/output terminal for the latch type sense amplifier. A second gate transistor, conductive in response to the second reference voltage, is connected between a load and the other input/output terminal of the latch type sense amplifier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.