Capacitive type semiconductor accelerometer
US5243861A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Sep 6, 1991 |
| Grant date | Sep 14, 1993 |
| Priority date | — |
| Expiry date | Sep 6, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/48463
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A capacitive type semiconductor accelerometer has an intermediate silicon plate of n type conductivity including a movable electrode constituting a pendulum mass formed within the intermediate silicon plate and supported thereby via a beam so as to permit movement in a direction perpendicular to its plane. A first conductive island is formed within the intermediate plate and is immovably supported thereby via a first insulating leg so as to be isolated therefrom, and an upper glass plate is anodic bonded to the intermediate silicon plate. A first stationary electrode is formed on the upper glass plate at the position facing one face of the movable electrode with a predetermined gap. A lower glass plate is anodic bonded to the intermediate silicon plate and a second stationary electrode is formed on the lower glass plate at the position facing the other face of the movable electrode with a predetermined gap. First, second and third pads are disposed in common on the lower glass plate at the outside of the intermediate silicon plate, the first pad being electrically connected to the first stationary electrode via a first thin film lead formed on the lower glass plate and the first co…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.