Patent · US Expired

Process control system of semiconductor vapor phase growth apparatus

US5244500A · kind A · utility

9Cited by
2References
8Claims
0Family size

Assignee

Inventor

Key dates

Filing dateOct 3, 1989
Grant dateSep 14, 1993
Priority date—
Expiry dateOct 3, 2009

Classification

  • Technology area (CPC C)Chemistry; Metallurgy
  • CPC primaryC23C16/54
  • WIPO fieldSurface technology, coating
  • WIPO sectorChemistry

Abstract

In a semiconductor vapor phase growing apparatus of the type disclosed in U.S. Pat. No. 4,430,959 dated Feb. 14, 1984, the thickness and resistivity of the semiconductor grown on a substrate by vapor phase growing technique are controlled by a sequence program. The content of the sequence program is corrected to approach a target thickness and a target resistivity at each batch operation. In a modification, an auxiliary mass flow valve is provided for each main mass flow valve and when the main mass flow valve becomes faulty, it is substituted by the auxiliary mass flow valve so as to continue the normal operation of the vapor phase growing apparatus.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.