Processes for lift-off of thin film materials and for the fabrication of three dimensional integrated circuits
US5244818A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 8, 1992 |
| Grant date | Sep 14, 1993 |
| Priority date | — |
| Expiry date | Apr 8, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/135
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Various novel processes permit integrating thin film semiconductor materials and devices using lift off, alignment, and deposition onto a host substrate. As a result, three dimensional integrated circuits can be constructed. Three dimensional communication in an integrated circuit can be implemented via electromagnetic communication between emitters and detectors fabricated via the novel processes. Integrated circuit layers are transparent to the electromagnetic signals propagated from the emitter and received by the detector. Furthermore, arrays of optical detectors can be implemented to perform image processing with tremendous speed. Processing circuitry can be situated directly below the optical detectors to process in massive parallel signals from individual optical detectors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.