Stackable high density interconnection mechanism (SHIM)
US5245135A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 1992 |
| Grant date | Sep 14, 1993 |
| Priority date | — |
| Expiry date | Apr 20, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49128
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A high density of interconnection sites on a dielectric substrate is provided by producing a laminated assembly with multiple layers of conductors (11, 21) positioned one above the other within the substrate (8). Each conductor (11, 21) terminates at a raised feature (12, 22) projecting beyond the surface of the substrate (8) for connection in an electrical circuit. This permits the conductors (11, 21) to be positioned in the same plane perpendicular to the substrate (8) so that two rows of termination pads (12, 22) may be provided without leaving space between the pads of one for the conductors of the other. Efficient, high speed impedance matching may be accomplished by the addition of a grounding conductor (26) between two signal layers of circuitry within the substrate, also provided with raised features (27) extending to the exterior of the substrate (8).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.