Integrated circuit
US5245207A · kind A · utility
34Cited by
7References
31Claims
0Family size
Inventors
Key dates
| Filing date | Aug 17, 1990 |
| Grant date | Sep 14, 1993 |
| Priority date | — |
| Expiry date | Aug 17, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/84
Abstract
A depletion operation is realized by using a depletion type MOSFET even at the room temperature or the liquid nitrogen temperature without doping the channel portion below the gate electrode with impurities having a conductivity type, which is opposite to the conductivity type of the semiconductor substrate. Further this FET can construct an inverter together with an enhancement type FET and these can be integrated on one substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.