Semiconductor integrated circuit device with multiplayered wiring
US5247198A · kind A · utility
31Cited by
6References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 18, 1989 |
| Grant date | Sep 21, 1993 |
| Priority date | — |
| Expiry date | Sep 18, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/859
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor integrated circuit device capable of having a high integration density and excellent performance and a method of fabricating the semiconductor integrated circuit device are disclosed. In this semiconductor integrated circuit device, a connecting conductor for connecting gate wiring which is formed on a field oxide film and extended from the gate of a MOSFET, to the source/drain region of another MOSFET is interposed between the gate wiring and one of two side space layers for defining the width of the gate wiring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.