Current sensing amplifier for SRAM
US5247479A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | May 23, 1991 |
| Grant date | Sep 21, 1993 |
| Priority date | — |
| Expiry date | May 23, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/063
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier for use in conjunction with a static random access memory array (SRAM) which uses a local or column sense amplifier. The column sense amplifier is a transconductance source coupled differential pair which converts a voltage differential on bitlines from a selected memory cell in a column of memory cells whose content is being read to a current differential. A global or secondary sense amplifier inputs the current differential on sense lines from each local or column sense amplifier, converts the current differential to a voltage differential and then amplifies the voltage differential. A current differential greater than that which can be produced using prior art techniques appears on the sense lines which in turn allows the content of a memory cell being read to be determined more quickly.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.