Photovoltaic cell and array with inherent bypass diode
US5248346A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 1992 |
| Grant date | Sep 28, 1993 |
| Priority date | — |
| Expiry date | Feb 24, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S136/293
Abstract
A photovoltaic cell (20) with a single pn-junction (46) is disclosed that is capable of functioning as both a current source and a bypass diode. The photovoltaic cell is made of material that has a low bandgap energy, 1.0 eV, or less. One version of the photovoltaic cell is formed of a GaSb wafer doped with Te to form an n-region (22); the Te concentration is between 3 and 15.times.10.sup.17 atoms/cm.sup.3. Multiple photovoltaic cells of this invention can be connected in series and placed in parallel across a like number of photovoltaic cells (76) that do not function as tunnel diodes in order to form a power-generating array (70). The photovoltaic cells are arranged in tandem pairs so that the photovoltaic cells (76), which are transparent to the light absorbed by the photovoltaic cells (20), overlie the photovoltaic cells (20). In the event one of the photovoltaic cell pairs (20, 76) is rendered inactive, current will flow through the inactive photovoltaic cell (20) to minimize the drop in output current from the array.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.