Amorphous silicon solar cell and method for manufacturing the same
US5248348A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 1991 |
| Grant date | Sep 28, 1993 |
| Priority date | — |
| Expiry date | Sep 5, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method for preparing an amorphous silicon solar cell is disclosed which comprises forming on a substrate, in the following order, a first electrode, a first conductive film, a thin first substantially intrinsic film, a thicker second substantially intrinsic film, a second conductive film and a second electrode. PA1 the method being characterized in that at least the thicker second substantially intrinsic film is formed by the sequential steps of: PA1 (a) depositing a semiconductor film containing 20 atom % or less of bound hydrogen and/or bound deuterium to a thickness of from 5 to 1000 .ANG., and then (b) modifying the deposited film, the sequence of steps being repeated multiple times. The solar cell formed by the above-mentioned method is particularly excellent in long-term stability.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.