Process for the preparation of silicon nitride having a small crystallite size
US5248490A · kind A · utility
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8References
6Claims
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Key dates
| Filing date | Apr 13, 1992 |
| Grant date | Sep 28, 1993 |
| Priority date | — |
| Expiry date | Apr 13, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2006/12
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
To prepare silicon nitride having a crystallite size of 40 to 60 nm and a specific surface area according to BET of 21 to 40 m.sup.2 /g, amorphous silicon nitride or amorphous silicon nitridoimide is brought into surface contact with gas containing water vapor or water-containing solvents and the amorphous silicon nitride or amorphous silicon nitridoimide thus surface-contacted is heated under a nitrogen atmosphere at a heating rate of at least 1.degree. C./minute to above the crystallization temperature of .alpha.-silicon nitride, which is above 1100.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.