Thin film silicon semiconductor device and process for producing thereof
US5248630A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1992 |
| Grant date | Sep 28, 1993 |
| Priority date | — |
| Expiry date | Mar 26, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thin film silicon semiconductor device provided on a substrate according to the present invention comprises a thin polycrystalline silicon film having a lattice constant smaller than that of a silicon single crystal and a small crystal grain size. This thin polycrystalline silicon film can be obtained by depositing a thin amorphous silicon film in an inert gas having a pressure of 3.5 Pa or lower by a sputtering deposition method and annealing the thin amorphous silicon film for a short time of 10 seconds or less to effect polycrystallization thereof. A thin film silicon semiconductor device comprising such a thin polycrystalline silicon film having a small lattice constant has excellent characteristics including a carrier mobility of 100 cm.sup.2 /V.multidot.s or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.