Valance specific lanthanide doped optoelectronic metal fluoride semiconductor device

US5248890A · kind A · utility

Assignee

• Forschungszentrum Jülich GmbH · DE

Inventors

• Hans Luth · Aachen, DE
• Harald Muller · Dormagen, DE
• Jürgen Schneider · Kirchzarten, DE
• Ralf Strumpler · Gebenstorf, CH

Key dates

• Filing date: Jun 6, 1991
• Grant date: Sep 28, 1993
• Expiry date: Jun 6, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3068
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An optoelectronic device, e.g. for integrated circuits, has an Si, II-VI or III/V semiconductor layer and an LaF.sub.3 or La.sub.1-x X.sub.x F.sub.3 insulating layer which is doped with Nd or Er to generate an optical signal whose wavelength is determined by the 4f ions used. The insulating layer can be grown epitaxially on the semiconductor layer and the lanthanide element ion substituting for a metal ion of the material forming the insulating layer has the same valence as the metal for which it is substituted.