High frequency signal processing apparatus with biasing arrangement
US5248950A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1992 |
| Grant date | Sep 28, 1993 |
| Priority date | — |
| Expiry date | Apr 14, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K2201/10166
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A high frequency signal processing apparatus having signal line patterns formed on the upper surface of a dielectric substrate has a bias line pattern that extends from each of the signal line patterns. The bias line pattern has a first portion formed on the upper surface of the dielectric substrate, a second portion formed on the lower surface of the dielectric substrate, and a conductor extending through the dielectric substrate for providing an electrical connection between the first and second portions of the bias line pattern. A trap pattern is formed on the lower surface of the dielectric substrate and is connected to the second portion of the bias line pattern at a position spaced a predetermined distance away from the corresponding one of the signal line patterns. The predetermined distance is substantially equal to an odd number multiplied by T.multidot..lambda./4 where T and .lambda. are the periodicity and wave-length of the high frequency signal to be processed. A grounded pattern is also formed on the first surface of the dielectric substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.