Erbium doped optical devices
US5249195A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1992 |
| Grant date | Sep 28, 1993 |
| Priority date | — |
| Expiry date | Jun 30, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/177
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention embodies an optical device with a Fabry-Perot cavity formed by two reflective mirrors and an active layer which is doped with a rare earth element selected from lanthanide series elements with number 57 through 71. The thickness of the active layer being a whole number multiple of .lambda./2 wherein .lambda. is the operating, or emissive, wavelength of the device, said whole number being one of the numbers ranging from 1 to 5, the fundamental mode of the cavity being in resonance with the emission wavelength of said selected rare earth element. Cavity-quality factors exceeding Q=300 and finesses of 73 are achieved with structures consisting of two Si/SiO.sub.2 distributed Bragg reflector (DBR) mirrors and an Er-implanted (.lambda./2) SiO.sub.2 active region. The bottom DBR mirror consists of four pairs and the upper DBR mirror consists of two-and-a half pairs of quarterwave (.lambda./4) layers of Si and SiO.sub.2. Photoluminescence at room temperature reveals a drastic enhancement of the luminescence intensity of the cavity emitted along the optical axis of the cavity versus the luminescence without the top mirror. The luminescence intensity of the cavity is typicall…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.