Process for growing GaAs monocrystal film
US5250148A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1991 |
| Grant date | Oct 5, 1993 |
| Priority date | — |
| Expiry date | Nov 12, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/68
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A GaAs monocrystal film was grown by use of a process which comprises introducing a gaseous compound containing a component element desired to be grown into a vacuum tank, and submitting the compound to reaction on a base to thereby grow a semiconductor crystal each one molecular layer. Triethylgallium (TEG) and arsine (AsH.sub.3) are used as the gaseous compound. One gas is introduced into the vaccum tank and then discharged after the passage of a predetermined time, and the other gas is introduced thereinto and then discharged after the passage of a predetermined time whereby a crystal for one molecular layer grows. By use of TEG as a gallium source, reaction progresses even when a temperature of the base is below 300.degree. C., and a GaAs monocrystal film which is extremely less in lattice failure and impurities was obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.