Process and apparatus for plasma CVD coating or plasma treating substrates
US5250328A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 29, 1992 |
| Grant date | Oct 5, 1993 |
| Priority date | — |
| Expiry date | Apr 29, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32293
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
To provide large-surface substrates economically and in a short time, with coatings which are to be more impenetrable and more homogeneous than conventionally produced coatings, a plasma CVD process is employed in which a reaction gas capable of depositing a coating material therefrom flows over the surface to be coated and the reaction gas is excited into a band-shaped plasma by microwaves fed from two microwave feeds, in a device comprising end walls (2, 3) and a waveguide (1) with a square cross-section in which two standing waves polarized perpendicular to one another are excited and are shifted relative to one another by one-quarter wavelength, the coupling of the microwaves to the plasma being performed by a lengthwise slit (6) made in one of the edges of waveguide (1), with two crossed microwave polarizers (4, 5) being positioned in waveguide (1), such that each polarizer can be penetrated by the microwaves from the feed (7, 8) adjacent thereto and cannot be penetrated by the microwaves from the feed (7, 8) not proximate thereto, with the distance between an end wall (2, 3 ) and the polarizer (4, 5) proximate thereto being selected so as to form standing waves.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.