Process for the production of thin film transistors
US5250451A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Apr 10, 1992 |
| Grant date | Oct 5, 1993 |
| Priority date | — |
| Expiry date | Apr 10, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/958
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for the local passivation of a substrate by a hydrogenated amorphous carbon layer and process for producing thin film transistors on said passivated substrate. The local passivation process consists of producing photosensitive resin patterns (3) on the substrate (1), subjecting the structure obtained to a radio-frequency plasma essentially constituted by a hydrocarbon for thus depositing a hydrogenated amorphous carbon layer (6) on the structure and dissolving the resin patterns (3) in order to eliminate the amorphous carbon deposited on the resin, the amorphous carbon deposited on the substrate constituting the said passivation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.