Production method of a semiconductor device
US5250453A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 29, 1992 |
| Grant date | Oct 5, 1993 |
| Priority date | — |
| Expiry date | Sep 29, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/411
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a field effect transistor includes depositing an insulating film on an active layer produced in a semiconductor substrate and removing a part of the insulating film, leaving a side wall substantially perpendicular to the substrate. A refractory metal is deposited on the surface of the semiconductor substrate and the insulating film. The refractory metal is removed except for a portion at the side wall of the insulating film to produce a gate electrode. A high dopant concentration region is ion implanted using the insulating film and refractory metal as a mask. The insulating film is removed and an intermediate dopant concentration region is ion implanted using the refractory metal as a mask. A source electrode is produced on the high dopant concentration region and a drain electrode is produced on the intermediate dopant concentration region. The invention may be used to produce asymmetrically doped drain and gate regions and an asymmetrically disposed gate electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.