Method of producing semiconductor substrate
US5250460A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 9, 1992 |
| Grant date | Oct 5, 1993 |
| Priority date | — |
| Expiry date | Oct 9, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/15
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a semiconductor substrate, comprises the steps of: forming pores in the entire body of a single-crystal silicon substrate by anodization; epitaxially growing a single-crystal silicon layer on a surface of the porous single-crystal silicon substrate; sticking a supporting substrate to the surface of the epitaxial layer of single-crystal silicon by using an adhesive; selectively etching the porous single-crystal silicon substrate; sticking the epitaxial layer fast to a transparent insulating substrate containing SiO.sub.2 as a main constituent; separating the supporting layer from the epitaxial layer by removing the adhesive; and heat-treating the epitaxial layer stuck fast on the transparent insulating layer. Alternatively, a porous layer is formed in a surface portion of a single-crystal silicon substrate, and then, the non-porous portion is removed before the porous layer is selectively etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.