Crystalline Si.sub.2 HSb.sub.2
US5252176A · kind A · utility
Inventor
Key dates
| Filing date | Jan 30, 1992 |
| Grant date | Oct 12, 1993 |
| Priority date | — |
| Expiry date | Jan 30, 2012 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention relates to a novel method of, and means for, directing energy through Si.sub.2 HSb.sub.2 in such a manner that normal energy parameters can be exceeded. The principal object of the invention is to provide the means for more efficient radiant energy power systems to be constructed. For example, this invention can be applied to construct more efficient rocket propulsion systems. Si.sub.2 HSb.sub.2 has a crystalline structure with a regular pattern of electron deficiencies which physicists call "holes" in the lattice. Energy can be radiated at the top of the compound and be accelerated as it passes through to a new higher velocity as it expelled out the bottom of the compound. This is accomplished by applying electrical potentials to the sides of the compound which rectify the "holes" in the lattice. The electrical potentials applied to the sides of the compound can be varied to allow the radiated energy output to be directed in the x,y plane. Thus the compound can be used as an excellent propulsion system. It can also be used to enhance any output of a radiated energy source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.