TEOV doping of gallium arsenide
US5252512A · kind A · utility
8Cited by
8References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1992 |
| Grant date | Oct 12, 1993 |
| Priority date | — |
| Expiry date | Oct 19, 2012 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/918
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
GaAs films compensated with TEOV to reduce free electron concentration are grown having superior morphology by heating the TEOV above the temperature used in the prior art, filtering the other constituents but not the TEOV, and reducing the arsenic ambient during the preliminary heating phase.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.