Low on resistance field effect transistor
US5252848A · kind A · utility
88Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1992 |
| Grant date | Oct 12, 1993 |
| Priority date | — |
| Expiry date | Feb 3, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/258
Abstract
A performance enhancing conductor (27) is employed to reduce a transistor's (10) on resistance and to also reduce the transistor's (10) parasitic gate to drain capacitance (32). The performance enhancing conductor (27) covers the transistor's (10) gate (22) and a portion of the drain region (18, 19) that is adjacent the transistor's channel (20). The performance enhancing conductor (27) is isolated from the gate (22) by an insulator (24, 26).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.