Drive circuit for use in a semiconductor integrated circuit
US5252863A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 1992 |
| Grant date | Oct 12, 1993 |
| Priority date | — |
| Expiry date | Mar 9, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/08
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A drive circuit provided in a semiconductor integrated circuit can perform a high-speed switching in compliance with a synchronizing signal and has a number of drive circuit elements. Each of the drive circuit elements is provided with a P-channel MOSFET, an N-channel MOSFET, and an inverter circuit to generate an output signal. The P-channel MOSFET has a gate connected to an input line of a first input signal and a source connected to a source line whereas the N-channel MOSFET has a gate connected to the input line of the first input signal, a source connected to an input line of an inverted logic signal of a second input signal, and a drain connected to a drain of the P-channel MOSFET. The inverter circuit has a gate connected to the drain of the P-channel MOSFET to generate the output signal in synchronization with the second input signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.