Semiconductor laser device
US5253265A · kind A · utility
8Cited by
1References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 6, 1992 |
| Grant date | Oct 12, 1993 |
| Priority date | — |
| Expiry date | Feb 6, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device having an active layer which is comprised of a quantum well layer formed of a mixed crystal material, and barrier layers provided on both sides of the quantum well layer in such a manner as to sandwich the same, is characterized in that Ge is thermally diffused in a portion of the active layer to disorder the quantum well layer and the barrier layers at that portion so as to form a non-light-emitting area with a low refractive index, while the quantum well layer and the barrier layers at a portion where Ge is not diffused is formed as a refractive index waveguide which is a light-emitting area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.