Bias ECR plasma CVD apparatus comprising susceptor, clamp, and chamber wall heating and cooling means
US5254171A · kind A · utility
34Cited by
4References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 13, 1992 |
| Grant date | Oct 19, 1993 |
| Priority date | — |
| Expiry date | Apr 13, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3321
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A bias ECR plasma CVD apparatus includes an ECR plasma generating chamber and a plasma CVD chamber for forming a film on a substrate by a plasma CVD reaction. A heating device and a cooling device are provided at least in the vicinity of the substrate for maintaining the substrate and the vicinity thereof at a constant temperature. With this construction, the number of contaminant particles deposited on a surface of the substrate in forming the film on the substrate can be reduced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.