Easily manufacturable thin film transistor structures
US5254488A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 4, 1990 |
| Grant date | Oct 19, 1993 |
| Priority date | — |
| Expiry date | Sep 4, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/949
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved structure and method for fabricating amorphous silicon thin film devices, particularly transistors, is described. In addition to their usual role as gate insulator and optional capping layer, the insulator films are chosen to maximize the transmission of photolithographic active light through the structure. These layers are positioned to either side of the amorphous silicon layer which is a light absorbing layer to act as anti-reflective elements. The insulator layers are chosen to have a refractive index different than the substrate and a thickness dimension chosen so the wave components of said lithographically active light reflected at the interfaces of the completed structure interfere destructively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.