Process of forming capacitive insulating film
US5254505A · kind A · utility
37Cited by
0References
3Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 3, 1991 |
| Grant date | Oct 19, 1993 |
| Priority date | — |
| Expiry date | Sep 3, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process of forming a capacitive insulating film comprises the steps of forming a tantalum oxide film through thermochemical reaction involving organic tantalum charge gas and oxygen gas, and subsequently forming a tantalum oxide film through plasma chemical reaction involving tantalum halogenide charge gas and nitrous oxide (N.sub.2 0) gas, said steps being performed in the same apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.