Aluminum alloy/silicon chromium sandwich schottky diode

US5254869A · kind A · utility

Assignee

• Linear Technology Holding LLC · US

Inventors

• John E. Readdie · San Jose, US
• Benjamin Kwan · Pleasanton, US
• Jeng Chang · Taichung, TW

Key dates

• Filing date: Jun 28, 1991
• Grant date: Oct 19, 1993
• Expiry date: Jun 28, 2011

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/64

Abstract

A Schottky diode is presented which has reduced minority carrier injection and reduced diffusion of the metallization into the semiconductor. These improvements are obtained by interposing a layer comprising a mixture of silicon and chromium between the anode metallization layer and the semiconductor in a Schottky diode. The layer including chromium acts an effective barrier against the diffusion of the metallization layer into the semiconductor, and at the same time reduces the amount of minority carrier injection into the substrate. The layer including chromium requires no addition photolithograpic masks because it can be plasma etched using the metallization layer as a mask after that layer has been patterned.