Boosted drive system for master/local word line memory architecture
US5255224A · kind A · utility
21Cited by
21References
29Claims
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Assignee
Inventors
Key dates
| Filing date | Dec 18, 1991 |
| Grant date | Oct 19, 1993 |
| Priority date | — |
| Expiry date | Dec 18, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C8/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated boost and local word line drive system that enhances the speed of the word line drive without providing excessive voltage stresses to the driver devices. A charge reservoir stores a boost voltage under the control of a charge pump that is regulated by a voltage regulator. One of the local word lines coupled to a selected master word line is enabled by a driver that receives the boost voltage. The switching times and signal slew rates of the driver, as well as the boost voltage, are controlled to prevent excessive gate stresses in the support circuitry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.