Method for in-situ doping of deposited silicon
US5256566A · kind A · utility
17Cited by
3References
17Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 8, 1991 |
| Grant date | Oct 26, 1993 |
| Priority date | — |
| Expiry date | May 8, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32155
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for in-situ doping of deposited silicon is disclosed. The method utilizes low temperature of approximately 560.degree. C., low pressure of approximately 300 mTorr, and low phosphine to silane ratio of approximately 0.0008 to form phosphorus doped silicon. The method is manufacturable in an automated LPCVD reactor. It allows relatively uniform defect free silicon films of low resistivity and good conformality and step coverage to be deposited at sufficient deposition rates over large semiconductor wafer lots for high wafer throughput.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.