Method of growing device quality InP onto an InP substrate using an organometallic precursor in a hot wall reactor

US5256595A · kind A · utility

Assignee

• The United States of America as represented by the Secretary of the Army · US

Inventors

• Joseph Flemish · Westfield, US
• Kenneth A. Jones · Brick, US
• Vladimir Sinisa Ban · Princeton, US

Key dates

• Filing date: Feb 19, 1993
• Grant date: Oct 26, 1993
• Expiry date: Feb 19, 2013

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S148/11
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

An organometallic precursor as for example trimethyl indium (TMI) is co-injected with HCl into a hot wall reactor to form volatile InCl, and PH.sub.3 is used as the phosphorus source. Layers of InP are grown at approximately 8 .mu.m/hr with excellent morphology and good electrical properties. Hall measurements at 77K show background n-type conductivity with n=7.times.10.sup.15 /cm.sup.3 and .mu..sup.S 34,000 cm.sub.2 /V-s. The method is capable of growing ternary and quaternary heterostructures with thin layers and abrupt junctions.