Top emitting VCSEL with implant
US5256596A · kind A · utility
50Cited by
6References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1992 |
| Grant date | Oct 26, 1993 |
| Priority date | — |
| Expiry date | Mar 26, 2012 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/2063
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
VCSELs including a central active layer with upper and lower mirror stacks wherein a circular trench is formed in one mirror stack to define a lasing area. The trench reduces reflectivity to prevent lasing outside the operating area and a deep beryllium implant in either of the mirror stacks, along with the trench, confines current distribution to maximize power output and efficiency. A transparent metal contact is used as a top contact in one embodiment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.