Microelectronic superconducting device with multi-layer contact
US5256636A · kind A · utility
14Cited by
2References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 21, 1990 |
| Grant date | Oct 26, 1993 |
| Priority date | — |
| Expiry date | Sep 21, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/702
Abstract
A microelectronic component comprising a crossover is provided comprising a substrate, a first high T.sub.c superconductor thin film, a second insulating thin film comprising SrTiO.sub.3 ; and a third high T.sub.c superconducting film which has strips which crossover one or more areas of the first superconductor film. An insitu method for depositing all three films on a substrate is provided which does not require annealing steps. The photolithographic process is used to separately pattern the high T.sub.c superconductor thin films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.