Photovoltaic device including a boron doping profile in an i-type layer
US5256887A · kind A · utility
24Cited by
11References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 19, 1991 |
| Grant date | Oct 26, 1993 |
| Priority date | — |
| Expiry date | Jul 19, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/548
Abstract
A photovoltaic cell for use in a single junction or multijunction photovoltaic device, which includes a p-type layer of a semiconductor compound including silicon, an i-type layer of an amorphous semiconductor compound including silicon, and an n-type layer of a semiconductor compound including silicon formed on the i-type layer. The i-type layer including an undoped first sublayer formed on the p-type layer, and a boron-doped second sublayer formed on the first sublayer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.